Discrete Semiconductor Products
BUK6D81-80EX
ActiveNexperia USA Inc.
TRANSISTOR MOSFET N-CH 80V 9.8A 6-PIN DFN2020MD T/R
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Discrete Semiconductor Products
BUK6D81-80EX
ActiveNexperia USA Inc.
TRANSISTOR MOSFET N-CH 80V 9.8A 6-PIN DFN2020MD T/R
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK6D81-80EX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9.8 A, 3.2 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14.9 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 504 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) | 2 W, 18.8 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 81 mOhm |
| Supplier Device Package | DFN2020MD-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BUK6D81-80E Series
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources