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80 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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80 V, N-channel Trench MOSFET
80 V, N-channel Trench MOSFET
| Part | Grade | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Qualification | Mounting Type | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | 504 pF | 3.2 A 9.8 A | N-Channel | 81 mOhm | DFN2020MD-6 | 2.7 V | 80 V | 4.5 V 10 V | 6-UDFN Exposed Pad | 14.9 nC | 2 W 18.8 W | MOSFET (Metal Oxide) | 175 °C | -55 °C | AEC-Q101 | Surface Mount | 20 V |