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TO-220-3
Discrete Semiconductor Products

IPP50R399CPHKSA1

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INFINEON

MOSFET N-CH 560V 9A TO220-3

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TO-220-3
Discrete Semiconductor Products

IPP50R399CPHKSA1

Unknown
INFINEON

MOSFET N-CH 560V 9A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP50R399CPHKSA1
Current - Continuous Drain (Id) @ 25°C9 A
Drain to Source Voltage (Vdss)560 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC
Input Capacitance (Ciss) (Max) @ Vds890 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs399 mOhm
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPP50R Series

N-Channel 560 V 9A (Tc) 83W (Tc) Through Hole PG-TO220-3-1

Documents

Technical documentation and resources