IPP50R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 550V 7.1A TO220-3

Part	Package / Case	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPP50R520CPHKSA1	TO-220-3	66 W	20 V	7.1 A	550 V	150 °C	-55 °C	N-Channel	10 V	MOSFET (Metal Oxide)	3.5 V	17 nC	Through Hole	520 mOhm	PG-TO220-3-1	680 pF
INFINEON IPP50R299CPXKSA1	TO-220-3	104 W	20 V	12 A	550 V	150 °C	-55 °C	N-Channel	10 V	MOSFET (Metal Oxide)	3.5 V	31 nC	Through Hole	299 mOhm	PG-TO220-3-1		1190 pF
INFINEON IPP50R350CPXKSA1	TO-220-3		20 V	10 A	550 V	150 °C	-55 °C	N-Channel	10 V	MOSFET (Metal Oxide)	3.5 V	25 nC	Through Hole		PG-TO220-3-1		1020 pF	350 mOhm
INFINEON IPP50R399CPHKSA1	TO-220-3	83 W	20 V	9 A	560 V	150 °C	-55 °C	N-Channel	10 V	MOSFET (Metal Oxide)	3.5 V	23 nC	Through Hole	399 mOhm	PG-TO220-3-1	890 pF
INFINEON IPP50R140CPHKSA1	TO-220-3	192 W	20 V	23 A	550 V	150 °C	-55 °C	N-Channel	10 V	MOSFET (Metal Oxide)	3.5 V	64 nC	Through Hole	140 mOhm	PG-TO220-3-1	2540 pF
INFINEON IPP50R350CPHKSA1	TO-220-3		20 V	10 A	500 V	150 °C	-55 °C	N-Channel	10 V	MOSFET (Metal Oxide)	3.5 V	25 nC	Through Hole		PG-TO220-3-1		1020 pF	350 mOhm
INFINEON IPP50R500CEXKSA1	TO-220-3		20 V	7.6 A	500 V			N-Channel	13 V	MOSFET (Metal Oxide)	3.5 V		Through Hole	500 mOhm	PG-TO220-3-1		433 pF		18.7 nC