Discrete Semiconductor Products

SI1065X-T1-GE3

Obsolete

MOSFET P-CH 12V 1.18A SC89-6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 1.18A SC89-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1065X-T1-GE3

Current - Continuous Drain (Id) @ 25°C	1.18 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10.8 nC
Input Capacitance (Ciss) (Max) @ Vds	480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max) [Max]	236 mW
Rds On (Max) @ Id, Vgs	156 mOhm
Supplier Device Package	SC-89 (SOT-563F)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Vishay General Semiconductor - Diodes Division SI1065X-T1-GE3	8 V	10.8 nC	Surface Mount	12 V	156 mOhm	SOT-563 SOT-666	236 mW	-55 °C	150 °C	480 pF	SC-89 (SOT-563F)	950 mV	MOSFET (Metal Oxide)	1.18 A	1.8 V 4.5 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 1.18A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

Technical documentation and resources

No documents available