SI1065 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 12V 1.18A SC89-6
| Part | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8 V | 10.8 nC | Surface Mount | 12 V | 156 mOhm | SOT-563 SOT-666 | 236 mW | -55 °C | 150 °C | 480 pF | SC-89 (SOT-563F) | 950 mV | MOSFET (Metal Oxide) | 1.18 A | 1.8 V 4.5 V | P-Channel |