Deep-Dive with AI
Search across all available documentation for this part.
Technical Specifications
Parameters and characteristics for this part
| Specification | PXP062-60QLJ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1070 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 46 W |
| Rds On (Max) @ Id, Vgs | 62 mOhm |
| Supplier Device Package | MLPAK33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.93 | |
Description
General part information
PXP062-60QL Series
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-1) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.