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60 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-1) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, P-channel Trench MOSFET
60 V, P-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 28 nC | P-Channel | 60 V | 4.5 V 10 V | Surface Mount | MLPAK33 | 62 mOhm | 1070 pF | 46 W | MOSFET (Metal Oxide) | 8-PowerVDFN | 20 A | 2.7 V | 150 °C | -55 °C | 20 V |