Discrete Semiconductor Products

BUK4D60-30X

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MOSFETS 40 V, N-CHANNEL TRENCH MOSFET

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Search across all available documentation for this part.

DocumentsPower MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)BUK4D60-30X Datasheet (PDF)+11

Discrete Semiconductor Products

BUK4D60-30X

Active

Nexperia USA Inc.

MOSFETS 40 V, N-CHANNEL TRENCH MOSFET

Deep-Dive with AI

DocumentsPower MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)BUK4D60-30X Datasheet (PDF)+11

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BUK4D60-30X

Current - Continuous Drain (Id) @ 25°C	8.3 A
Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	2.5 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	296 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	7.5 W, 2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	57 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.25 V

BUK4D60-30 Series

30 V, N-channel Trench MOSFET

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Grade	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Qualification
Nexperia USA Inc. BUK4D60-30X	175 °C	-55 °C	1.25 V	8.3 A	4.2 A	57 mOhm	N-Channel	2 W 7.5 W	Automotive	2.5 V 8 V	DFN2020MD-6	296 pF	MOSFET (Metal Oxide)	12 V	5 nC	6-UDFN Exposed Pad	Surface Mount	30 V	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.20
Mouser	N/A	1	$ 0.51
		10	$ 0.36
		100	$ 0.27
		500	$ 0.21
		1000	$ 0.17
		3000	$ 0.16
		9000	$ 0.15

Description

General part information

BUK4D60-30 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.