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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | FET Type | Power Dissipation (Max) | Grade | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 175 °C | -55 °C | 1.25 V | 8.3 A | 4.2 A | 57 mOhm | N-Channel | 2 W 7.5 W | Automotive | 2.5 V 8 V | DFN2020MD-6 | 296 pF | MOSFET (Metal Oxide) | 12 V | 5 nC | 6-UDFN Exposed Pad | Surface Mount | 30 V | AEC-Q101 |