Discrete Semiconductor Products

SIHB4N80E-GE3

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MOSFET N-CH 800V 4.3A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 800V 4.3A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHB4N80E-GE3

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	622 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Rds On (Max) @ Id, Vgs	1.27 Ohm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Vishay General Semiconductor - Diodes Division SIHB4N80E-GE3	10 V	30 V	4.3 A	32 nC	800 V	TO-263 (D2PAK)	N-Channel	4 V	1.27 Ohm	Surface Mount	622 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.09

General part information

N-Channel 800 V 4.3A (Tc) 69W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources