SIHB4 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 800V 4.3A D2PAK
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | FET Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 10 V | 30 V | 4.3 A | 32 nC | 800 V | TO-263 (D2PAK) | N-Channel | 4 V | 1.27 Ohm | Surface Mount | 622 pF | MOSFET (Metal Oxide) | -55 °C | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |