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200 TFBGA FW
Integrated Circuits (ICs)

MT53E1G32D2FW-046 WT:B

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Micron Technology Inc.

DRAM, MOBILE LPDDR4, 32 GBIT, 1G X 32BIT, 2.133 GHZ, TFBGA, 200 PINS

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200 TFBGA FW
Integrated Circuits (ICs)

MT53E1G32D2FW-046 WT:B

Active
Micron Technology Inc.

DRAM, MOBILE LPDDR4, 32 GBIT, 1G X 32BIT, 2.133 GHZ, TFBGA, 200 PINS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMT53E1G32D2FW-046 WT:B
Access Time3.5 ns
Clock Frequency2.133 GHz
Memory FormatDRAM
Memory InterfaceParallel
Memory Organization [custom]32
Memory Organization [custom]1 G
Memory Size4 MB
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-25 °C
Package / Case200-TFBGA
Supplier Device Package200-TFBGA (10x14.5)
TechnologySDRAM - Mobile LPDDR4
Voltage - Supply [Max]1.17 V
Voltage - Supply [Min]1.06 V
Write Cycle Time - Word, Page18 ns
PartPackage / CaseMounting TypeMemory FormatQualificationMemory SizeGradeAccess TimeOperating Temperature [Min]Operating Temperature [Max]Voltage - Supply [Min]Voltage - Supply [Max]Write Cycle Time - Word, PageClock FrequencyMemory InterfaceSupplier Device PackageMemory TypeMemory Organization [custom]Memory Organization [custom]TechnologyVoltage - Supply
200 TFBGA FW
Micron Technology Inc.
200-TFBGA
Surface Mount
DRAM
AEC-Q100
4 MB
Automotive
3.5 ns
-40 °C
105 °C
1.06 V
1.17 V
18 ns
2.133 GHz
Parallel
200-TFBGA (10x14.5)
Volatile
32
1 G
SDRAM - Mobile LPDDR4X
200 TFBGA FW
Micron Technology Inc.
200-TFBGA
Surface Mount
DRAM
4 MB
-25 °C
85 °C
1.06 V
1.17 V
18 ns
2.133 GHz
Parallel
200-TFBGA (10x14.5)
Volatile
32
1 G
SDRAM - Mobile LPDDR4X
200-VFBGA
Micron Technology Inc.
DRAM
4 MB
-30 °C
85 °C
2.133 GHz
Volatile
32
1 G
SDRAM - Mobile LPDDR4
1.1 V
200 TFBGA FW
Micron Technology Inc.
200-TFBGA
Surface Mount
DRAM
AEC-Q100
4 MB
Automotive
-40 °C
95 °C
1.06 V
1.17 V
18 ns
2.133 GHz
Parallel
200-TFBGA (10x14.5)
Volatile
32
1 G
SDRAM - Mobile LPDDR4X
200 TFBGA FW
Micron Technology Inc.
200-TFBGA
Surface Mount
DRAM
AEC-Q100
4 MB
Automotive
-40 °C
125 °C
1.06 V
1.17 V
18 ns
2.133 GHz
Parallel
200-TFBGA (10x14.5)
Volatile
32
1 G
SDRAM - Mobile LPDDR4X
200 TFBGA FW
Micron Technology Inc.
200-TFBGA
Surface Mount
DRAM
AEC-Q100
4 MB
Automotive
3.5 ns
-40 °C
95 °C
1.06 V
1.17 V
18 ns
2.133 GHz
Parallel
200-TFBGA (10x14.5)
Volatile
32
1 G
SDRAM - Mobile LPDDR4X
MT53E1G32D2NP-053 RS WT:C
Micron Technology Inc.
DRAM
4 MB
32
1 G
SDRAM - Mobile LPDDR4
200 TFBGA FW
Micron Technology Inc.
200-TFBGA
Surface Mount
DRAM
AEC-Q100
4 MB
Automotive
-40 °C
105 °C
1.06 V
1.17 V
18 ns
2.133 GHz
Parallel
200-TFBGA (10x14.5)
Volatile
32
1 G
SDRAM - Mobile LPDDR4X
200 TFBGA FW
Micron Technology Inc.
200-TFBGA
Surface Mount
DRAM
4 MB
-40 °C
95 °C
1.06 V
1.17 V
18 ns
2.133 GHz
Parallel
200-TFBGA (10x14.5)
Volatile
32
1 G
SDRAM - Mobile LPDDR4X
200 TFBGA FW
Micron Technology Inc.
200-TFBGA
Surface Mount
DRAM
4 MB
3.5 ns
-25 °C
85 °C
1.06 V
1.17 V
18 ns
2.133 GHz
Parallel
200-TFBGA (10x14.5)
Volatile
32
1 G
SDRAM - Mobile LPDDR4

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1568$ 77.50
Tray 1$ 31.19
10$ 27.69
25$ 26.40
40$ 25.77
80$ 24.85
230$ 23.52
MouserN/A 1$ 29.66
10$ 27.45
25$ 26.12
50$ 25.47
100$ 24.50
NewarkEach 1$ 30.85
5$ 29.69
10$ 28.54
25$ 27.62
50$ 27.16
100$ 26.48
250$ 25.47

Description

General part information

MT53E1G32 Series

MT53E1G32D2FW-046 WT:B is a LPDDR4X/LPDDR4 SDRAM. The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.

Documents

Technical documentation and resources