
Integrated Circuits (ICs)
MT53E1G32D2FW-046 WT:B
ActiveMicron Technology Inc.
DRAM, MOBILE LPDDR4, 32 GBIT, 1G X 32BIT, 2.133 GHZ, TFBGA, 200 PINS
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Integrated Circuits (ICs)
MT53E1G32D2FW-046 WT:B
ActiveMicron Technology Inc.
DRAM, MOBILE LPDDR4, 32 GBIT, 1G X 32BIT, 2.133 GHZ, TFBGA, 200 PINS
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MT53E1G32D2FW-046 WT:B |
|---|---|
| Access Time | 3.5 ns |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization [custom] | 32 |
| Memory Organization [custom] | 1 G |
| Memory Size | 4 MB |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -25 °C |
| Package / Case | 200-TFBGA |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Technology | SDRAM - Mobile LPDDR4 |
| Voltage - Supply [Max] | 1.17 V |
| Voltage - Supply [Min] | 1.06 V |
| Write Cycle Time - Word, Page | 18 ns |
| Part | Package / Case | Mounting Type | Memory Format | Qualification | Memory Size | Grade | Access Time | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Supply [Min] | Voltage - Supply [Max] | Write Cycle Time - Word, Page | Clock Frequency | Memory Interface | Supplier Device Package | Memory Type | Memory Organization [custom] | Memory Organization [custom] | Technology | Voltage - Supply |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | 200-TFBGA | Surface Mount | DRAM | AEC-Q100 | 4 MB | Automotive | 3.5 ns | -40 °C | 105 °C | 1.06 V | 1.17 V | 18 ns | 2.133 GHz | Parallel | 200-TFBGA (10x14.5) | Volatile | 32 | 1 G | SDRAM - Mobile LPDDR4X | |
Micron Technology Inc. | 200-TFBGA | Surface Mount | DRAM | 4 MB | -25 °C | 85 °C | 1.06 V | 1.17 V | 18 ns | 2.133 GHz | Parallel | 200-TFBGA (10x14.5) | Volatile | 32 | 1 G | SDRAM - Mobile LPDDR4X | ||||
Micron Technology Inc. | DRAM | 4 MB | -30 °C | 85 °C | 2.133 GHz | Volatile | 32 | 1 G | SDRAM - Mobile LPDDR4 | 1.1 V | ||||||||||
Micron Technology Inc. | 200-TFBGA | Surface Mount | DRAM | AEC-Q100 | 4 MB | Automotive | -40 °C | 95 °C | 1.06 V | 1.17 V | 18 ns | 2.133 GHz | Parallel | 200-TFBGA (10x14.5) | Volatile | 32 | 1 G | SDRAM - Mobile LPDDR4X | ||
Micron Technology Inc. | 200-TFBGA | Surface Mount | DRAM | AEC-Q100 | 4 MB | Automotive | -40 °C | 125 °C | 1.06 V | 1.17 V | 18 ns | 2.133 GHz | Parallel | 200-TFBGA (10x14.5) | Volatile | 32 | 1 G | SDRAM - Mobile LPDDR4X | ||
Micron Technology Inc. | 200-TFBGA | Surface Mount | DRAM | AEC-Q100 | 4 MB | Automotive | 3.5 ns | -40 °C | 95 °C | 1.06 V | 1.17 V | 18 ns | 2.133 GHz | Parallel | 200-TFBGA (10x14.5) | Volatile | 32 | 1 G | SDRAM - Mobile LPDDR4X | |
Micron Technology Inc. | DRAM | 4 MB | 32 | 1 G | SDRAM - Mobile LPDDR4 | |||||||||||||||
Micron Technology Inc. | 200-TFBGA | Surface Mount | DRAM | AEC-Q100 | 4 MB | Automotive | -40 °C | 105 °C | 1.06 V | 1.17 V | 18 ns | 2.133 GHz | Parallel | 200-TFBGA (10x14.5) | Volatile | 32 | 1 G | SDRAM - Mobile LPDDR4X | ||
Micron Technology Inc. | 200-TFBGA | Surface Mount | DRAM | 4 MB | -40 °C | 95 °C | 1.06 V | 1.17 V | 18 ns | 2.133 GHz | Parallel | 200-TFBGA (10x14.5) | Volatile | 32 | 1 G | SDRAM - Mobile LPDDR4X | ||||
Micron Technology Inc. | 200-TFBGA | Surface Mount | DRAM | 4 MB | 3.5 ns | -25 °C | 85 °C | 1.06 V | 1.17 V | 18 ns | 2.133 GHz | Parallel | 200-TFBGA (10x14.5) | Volatile | 32 | 1 G | SDRAM - Mobile LPDDR4 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MT53E1G32 Series
MT53E1G32D2FW-046 WT:B is a LPDDR4X/LPDDR4 SDRAM. The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.
Documents
Technical documentation and resources