Integrated Circuits (ICs)

MT53E1G32D2FW-046 AAT:C TR

Active

Micron Technology Inc.

IC DRAM 32GBIT PAR 200TFBGA

Deep-Dive with AI

Search across all available documentation for this part.

Integrated Circuits (ICs)

MT53E1G32D2FW-046 AAT:C TR

Active

Micron Technology Inc.

IC DRAM 32GBIT PAR 200TFBGA

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E1G32D2FW-046 AAT:C TR

Access Time	3.5 ns
Clock Frequency	2.133 GHz
Grade	Automotive
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization [custom]	32
Memory Organization [custom]	1 G
Memory Size	4 MB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	105 °C
Operating Temperature [Min]	-40 °C
Package / Case	200-TFBGA
Qualification	AEC-Q100
Supplier Device Package	200-TFBGA (10x14.5)
Technology	SDRAM - Mobile LPDDR4X
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E1G32 Series

Part	Package / Case	Mounting Type	Memory Format	Qualification	Memory Size	Grade	Access Time	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Supply [Min]	Voltage - Supply [Max]	Write Cycle Time - Word, Page	Clock Frequency	Memory Interface	Supplier Device Package	Memory Type	Memory Organization [custom]	Memory Organization [custom]	Technology	Voltage - Supply
Micron Technology Inc. MT53E1G32D2FW-046 AAT:C TR	200-TFBGA	Surface Mount	DRAM	AEC-Q100	4 MB	Automotive	3.5 ns	-40 °C	105 °C	1.06 V	1.17 V	18 ns	2.133 GHz	Parallel	200-TFBGA (10x14.5)	Volatile	32	1 G	SDRAM - Mobile LPDDR4X
Micron Technology Inc. MT53E1G32D2FW-046 WT:A TR	200-TFBGA	Surface Mount	DRAM		4 MB			-25 °C	85 °C	1.06 V	1.17 V	18 ns	2.133 GHz	Parallel	200-TFBGA (10x14.5)	Volatile	32	1 G	SDRAM - Mobile LPDDR4X
Micron Technology Inc. MT53E1G32D4NQ-046 WT:E TR			DRAM		4 MB			-30 °C	85 °C				2.133 GHz			Volatile	32	1 G	SDRAM - Mobile LPDDR4	1.1 V
Micron Technology Inc. MT53E1G32D2FW-046 AIT:A	200-TFBGA	Surface Mount	DRAM	AEC-Q100	4 MB	Automotive		-40 °C	95 °C	1.06 V	1.17 V	18 ns	2.133 GHz	Parallel	200-TFBGA (10x14.5)	Volatile	32	1 G	SDRAM - Mobile LPDDR4X
Micron Technology Inc. MT53E1G32D2FW-046 AUT:A TR	200-TFBGA	Surface Mount	DRAM	AEC-Q100	4 MB	Automotive		-40 °C	125 °C	1.06 V	1.17 V	18 ns	2.133 GHz	Parallel	200-TFBGA (10x14.5)	Volatile	32	1 G	SDRAM - Mobile LPDDR4X
Micron Technology Inc. MT53E1G32D2FW-046 AIT:B TR	200-TFBGA	Surface Mount	DRAM	AEC-Q100	4 MB	Automotive	3.5 ns	-40 °C	95 °C	1.06 V	1.17 V	18 ns	2.133 GHz	Parallel	200-TFBGA (10x14.5)	Volatile	32	1 G	SDRAM - Mobile LPDDR4X
Micron Technology Inc. MT53E1G32D2NP-053 RS WT:C			DRAM		4 MB												32	1 G	SDRAM - Mobile LPDDR4
Micron Technology Inc. MT53E1G32D2FW-046 AAT:A	200-TFBGA	Surface Mount	DRAM	AEC-Q100	4 MB	Automotive		-40 °C	105 °C	1.06 V	1.17 V	18 ns	2.133 GHz	Parallel	200-TFBGA (10x14.5)	Volatile	32	1 G	SDRAM - Mobile LPDDR4X
Micron Technology Inc. MT53E1G32D2FW-046 IT:A TR	200-TFBGA	Surface Mount	DRAM		4 MB			-40 °C	95 °C	1.06 V	1.17 V	18 ns	2.133 GHz	Parallel	200-TFBGA (10x14.5)	Volatile	32	1 G	SDRAM - Mobile LPDDR4X
Micron Technology Inc. MT53E1G32D2FW-046 WT:B	200-TFBGA	Surface Mount	DRAM		4 MB		3.5 ns	-25 °C	85 °C	1.06 V	1.17 V	18 ns	2.133 GHz	Parallel	200-TFBGA (10x14.5)	Volatile	32	1 G	SDRAM - Mobile LPDDR4

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 77.31
	Tape & Reel (TR)	2000	$ 32.82

Description

General part information

MT53E1G32 Series

SDRAM - Mobile LPDDR4X Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)

Documents

Technical documentation and resources

No documents available