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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC8401 |
|---|---|
| Current - Supply | 60 mA |
| Frequency [Max] | 28 GHz |
| Frequency [Min] | 0 Hz |
| Gain | 14.5 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 1.5 dB |
| P1dB | 16.5 dB |
| Package / Case | Die |
| RF Type | VSAT |
| Supplier Device Package | Die |
| Voltage - Supply | 7.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
HMC8401-DIE Series
The HMC8401 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC8401 is a wideband low noise amplifier which operates between dc and 28 GHz. The amplifier provides 14.5 dB of gain, 1.5 dB noise figure, 26 dBm output IP3 and 16.5 dBm of output power at 1 dB gain compression while requiring 60 mA from a 7.5 V supply. The HMC8401 also has a gain control option, VGG2. The HMC8401 amplifier input/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).ApplicationsTest instrumentationMicrowave radios and very small aperture terminals (VSATs)Military and spaceTelecommunications infrastructureFiber optics
Documents
Technical documentation and resources