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Technical Specifications

Parameters and characteristics for this part

SpecificationPMX400UPEZ
Current - Continuous Drain (Id) @ 25°C900 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs2.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]127 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case0603 Metric
Package / Case0201
Power Dissipation (Max)4.7 W, 300 mW
Rds On (Max) @ Id, Vgs500 mOhm
Supplier Device PackageDFN0603-3 (SOT8013)
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.11

Description

General part information

PMX400UPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.