Catalog
20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
Beta
⌘K
20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Power Dissipation (Max) | Package / Case | Package / Case | Supplier Device Package | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 2.3 nC | 8 V | 20 V | Surface Mount | 150 °C | -55 °C | P-Channel | 127 pF | MOSFET (Metal Oxide) | 4.7 W 300 mW | 0603 Metric | 0201 | DFN0603-3 (SOT8013) | 950 mV | 500 mOhm | 900 mA | 1.8 V | 4.5 V |