
DTA123YU3HZGT106
ActivePNP, SOT-323, R1≠R2 LEAK ABSORPTION TYPE DIGITAL TRANSISTOR (BIAS RESISTOR BUILT-IN TRANSISTOR) FOR AUTOMOTIVE
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DTA123YU3HZGT106
ActivePNP, SOT-323, R1≠R2 LEAK ABSORPTION TYPE DIGITAL TRANSISTOR (BIAS RESISTOR BUILT-IN TRANSISTOR) FOR AUTOMOTIVE
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Technical Specifications
Parameters and characteristics for this part
| Specification | DTA123YU3HZGT106 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 hFE |
| Frequency - Transition | 250 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Power - Max [Max] | 200 mW |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | UMT3 |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DTA123YE3HZG Series
DTA123YU3HZG is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. This is a high-reliability product of automotive grade qualified to AEC-Q101.
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Technical documentation and resources