Specification	BSS84AKV,115

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	170 mA
Drain to Source Voltage (Vdss)	50 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.35 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	36 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	500 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.5 Ohm
Supplier Device Package	SOT-666
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

BSS84AKV Series

50 V, 170 mA dual P-channel Trench MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	FET Feature	Supplier Device Package	Vgs(th) (Max) @ Id	Grade	Technology	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power - Max [Max]
Nexperia USA Inc. BSS84AKV,115	170 mA	Logic Level Gate	SOT-666	2.1 V	Automotive	MOSFET (Metal Oxide)	AEC-Q101	150 °C	-55 °C	50 V	Surface Mount	0.35 nC	SOT-563 SOT-666	7.5 Ohm	2 P-Channel (Dual)	36 pF	500 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.48
TME	N/A	5	$ 0.43
		10	$ 0.21
		100	$ 0.15
		500	$ 0.12

Description

General part information

BSS84AKV Series

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.