50 V, 170 mA dual P-channel Trench MOSFET
50 V, 170 mA dual P-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | FET Feature | Supplier Device Package | Vgs(th) (Max) @ Id | Grade | Technology | Qualification | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Configuration | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 170 mA | Logic Level Gate | SOT-666 | 2.1 V | Automotive | MOSFET (Metal Oxide) | AEC-Q101 | 150 °C | -55 °C | 50 V | Surface Mount | 0.35 nC | SOT-563 SOT-666 | 7.5 Ohm | 2 P-Channel (Dual) | 36 pF | 500 mW |