Discrete Semiconductor Products

IGW50N65H5AXKSA1

NRND

IGBT TRENCH 650V 80A TO247-3

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Discrete Semiconductor Products

NRND

IGBT TRENCH 650V 80A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IGW50N65H5AXKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	116 nC
Grade	Automotive
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	270 W
Qualification	AEC-Q101
Supplier Device Package	PG-TO247-3
Switching Energy [custom]	160 µJ
Switching Energy [custom]	450 µJ
Td (on/off) @ 25°C	173 ns, 21 ns
Test Condition	12 Ohm, 400 V, 25 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Mounting Type	Switching Energy	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Test Condition	Package / Case	IGBT Type	Qualification	Td (on/off) @ 25°C	Switching Energy [custom]	Switching Energy [custom]	Grade
INFINEON IGW50N65H5FKSA1	Through Hole	180 µJ 520 µJ	80 A	PG-TO247-3	2.1 V	150 A	305 W	175 °C	-40 °C	120 nC	650 V	21 ns 180 ns	12 Ohm 15 V 25 A 400 V	TO-247-3
INFINEON IGW50N65H5AXKSA1	Through Hole		80 A	PG-TO247-3	2.1 V	150 A	270 W	175 °C	-40 °C	116 nC	650 V		12 Ohm 15 V 25 A 400 V	TO-247-3	Trench	AEC-Q101	21 ns 173 ns	160 µJ	450 µJ	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench 650 V 80 A 270 W Through Hole PG-TO247-3

Technical documentation and resources