Discrete Semiconductor Products

IGW50N65H5FKSA1

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INFINEON

THE IGW50N65H5 IS A 650 V IGBT IN TO-247 PACKAGE

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Discrete Semiconductor Products

IGW50N65H5FKSA1

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INFINEON

THE IGW50N65H5 IS A 650 V IGBT IN TO-247 PACKAGE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IGW50N65H5FKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	120 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	305 W
Supplier Device Package	PG-TO247-3
Switching Energy	180 µJ, 520 µJ
Td (on/off) @ 25°C	21 ns, 180 ns
Test Condition	12 Ohm, 400 V, 25 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

IGW50N65 Series

Part	Mounting Type	Switching Energy	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Test Condition	Package / Case	IGBT Type	Qualification	Td (on/off) @ 25°C	Switching Energy [custom]	Switching Energy [custom]	Grade
INFINEON IGW50N65H5FKSA1	Through Hole	180 µJ 520 µJ	80 A	PG-TO247-3	2.1 V	150 A	305 W	175 °C	-40 °C	120 nC	650 V	21 ns 180 ns	12 Ohm 15 V 25 A 400 V	TO-247-3
INFINEON IGW50N65H5AXKSA1	Through Hole		80 A	PG-TO247-3	2.1 V	150 A	270 W	175 °C	-40 °C	116 nC	650 V		12 Ohm 15 V 25 A 400 V	TO-247-3	Trench	AEC-Q101	21 ns 173 ns	160 µJ	450 µJ	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.98
	Tube	240	$ 2.19

Description

General part information

IGW50N65 Series

The 650 V, 50 A hard-switchingIGBTTRENCHSTOP™ 5in TO-247 package redefines "Best-in-class" IGBT by providing unmatched performance in terms of efficiency for hard switching applications. This family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Documents

Technical documentation and resources