Specification	FDME1024NZT

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	600 mW
Rds On (Max) @ Id, Vgs [Max]	66 mOhm
Supplier Device Package	6-MicroFET
Supplier Device Package [x]	1.6
Supplier Device Package [y]	1.6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

FDME1024NZT Series

Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mΩ

Part	Configuration	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Feature	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Technology
ON Semiconductor FDME1024NZT	2 N-Channel (Dual)	20 V	4.2 nC	Surface Mount	Logic Level Gate	1 V	3.8 A	6-UFDFN Exposed Pad	300 pF	66 mOhm	600 mW	-55 °C	150 °C	1.6	1.6	6-MicroFET	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.39
		10	$ 0.88
		100	$ 0.58
		500	$ 0.46
		1000	$ 0.42
		2000	$ 0.38
	Digi-Reel®	1	$ 1.39
		10	$ 0.88
		100	$ 0.58
		500	$ 0.46
		1000	$ 0.42
		2000	$ 0.38
	Tape & Reel (TR)	5000	$ 0.34
		10000	$ 0.33
Newark	Each (Supplied on Cut Tape)	1	$ 1.02
		25	$ 0.71
		50	$ 0.61
		100	$ 0.50
		250	$ 0.48
ON Semiconductor	N/A	1	$ 0.20

Description

General part information

FDME1024NZT Series

This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.