FDME1024NZT Series

Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mΩ

Catalog

Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mΩ

Part	Configuration	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Feature	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Technology
ON Semiconductor FDME1024NZT	2 N-Channel (Dual)	20 V	4.2 nC	Surface Mount	Logic Level Gate	1 V	3.8 A	6-UFDFN Exposed Pad	300 pF	66 mOhm	600 mW	-55 °C	150 °C	1.6	1.6	6-MicroFET	MOSFET (Metal Oxide)

Catalog

Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mΩ

Key Features

• Max rDS(on)= 66 mΩ at VGS= 4.5 V, ID= 3.4 A

• Max rDS(on)= 86 mΩ at VGS= 2.5 V, ID= 2.9 A

• Max rDS(on)= 113 mΩ at VGS= 1.8 V, ID= 2.5 A

• Max rDS(on)= 160 mΩ at VGS= 1.5 V, ID= 2.1 A

• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6Thin

• Free from halogenated compounds and antimony oxides

• HBM ESD protection level > 1600V(Note 3)

• RoHS Compliant

Description

This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.