CSD22205LT
Active-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1.2 MM X 1.2 MM, 9.9 MOHM, GATE ESD PROTECTION
Deep-Dive with AI
Search across all available documentation for this part.
CSD22205LT
Active-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1.2 MM X 1.2 MM, 9.9 MOHM, GATE ESD PROTECTION
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD22205LT |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.4 A |
| Drain to Source Voltage (Vdss) | 8 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1390 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 4-XFLGA |
| Power Dissipation (Max) [Max] | 600 mW |
| Rds On (Max) @ Id, Vgs | 9.9 mOhm |
| Supplier Device Package | 4-PICOSTAR |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | -6 V |
| Vgs(th) (Max) @ Id | 1.05 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.76 | |
| 10 | $ 0.62 | |||
| 100 | $ 0.48 | |||
| Digi-Reel® | 1 | $ 0.76 | ||
| 10 | $ 0.62 | |||
| 100 | $ 0.48 | |||
| Tape & Reel (TR) | 250 | $ 0.48 | ||
| 500 | $ 0.41 | |||
| 1250 | $ 0.41 | |||
| Texas Instruments | SMALL T&R | 1 | $ 0.93 | |
| 100 | $ 0.63 | |||
| 250 | $ 0.49 | |||
| 1000 | $ 0.33 | |||
Description
General part information
CSD22205L Series
This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls.
This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls.
Documents
Technical documentation and resources