Specification	PBSS4260PANP,115

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	140 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	510 mW
Qualification	AEC-Q100
Supplier Device Package	6-HUSON (2x2)
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	90 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

PBSS4260PANP Series

60 V, 2 A NPN/PNP low VCEsat transistor

Part	Grade	Transistor Type	Qualification	Operating Temperature	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Supplier Device Package
Nexperia USA Inc. PBSS4260PANP,115	Automotive	1 NPN 1 PNP	AEC-Q100	150 °C	6-UFDFN Exposed Pad	60 V	510 mW	Surface Mount	140 MHz	100 nA	120	90 mV	2 A	6-HUSON (2x2)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.08

Description

General part information

PBSS4260PANP Series

NPN/PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.