Catalog
60 V, 2 A NPN/PNP low VCEsat transistor
Description
AI
NPN/PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
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60 V, 2 A NPN/PNP low VCEsat transistor
60 V, 2 A NPN/PNP low VCEsat transistor
| Part | Grade | Transistor Type | Qualification | Operating Temperature | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Mounting Type | Frequency - Transition | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Automotive | 1 NPN 1 PNP | AEC-Q100 | 150 °C | 6-UFDFN Exposed Pad | 60 V | 510 mW | Surface Mount | 140 MHz | 100 nA | 120 | 90 mV | 2 A | 6-HUSON (2x2) |