Discrete Semiconductor Products

JAN1N3614

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DIODE GEN PURP 800V 1A AXIAL

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 1A AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N3614

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Grade	Military
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	A, Axial
Qualification	MIL-PRF-19500/228
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	A, Axial
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Reverse Leakage @ Vr	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Speed	Speed	Supplier Device Package	Package / Case	Current - Average Rectified (Io)	Grade	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type
Microchip Technology JAN1N3614	1 µA	MIL-PRF-19500/228	800 V	1.1 V	Standard	Standard Recovery >500ns	200 mA	A Axial	A Axial	1 A	Military	175 ░C	-65 C	Through Hole
Microchip Technology 1N3614	1 µA		800 V	1.1 V	Standard	Standard Recovery >500ns	200 mA	A Axial	A Axial	1 A		175 ░C	-65 C	Through Hole
Microchip Technology JANTX1N3614	1 µA	MIL-PRF-19500/228	800 V	1.1 V	Standard	Standard Recovery >500ns	200 mA	A Axial	A Axial	1 A	Military	175 ░C	-65 C	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	178	$ 3.85

General part information

Diode 800 V 1A Through Hole A, Axial

Technical documentation and resources

No documents available