PSMN4R3-80ES,127

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MOSFET N-CH 80V 120A I2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 80V 120A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN4R3-80ES,127

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Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PSMN4R3-80ES,127
Freescale Semiconductor - NXP PSMN4R6-100XS,127	100 V	70.4 A	10 V	20 V	N-Channel	Through Hole	-55 °C	175 ░C	63.8 W	TO-220F	TO-220-3 Full Pack Isolated Tab	MOSFET (Metal Oxide)	9900 pF	153 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	251	$ 1.20

General part information

MOSFET N-CH 80V 120A I2PAK

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