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PMN40XPEAX
Discrete Semiconductor Products

PMN40XPEAX

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Nexperia USA Inc.

SMALL SIGNAL MOSFET FOR AUTOMOTI

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PMN40XPEAX
Discrete Semiconductor Products

PMN40XPEAX

Active
Nexperia USA Inc.

SMALL SIGNAL MOSFET FOR AUTOMOTI

Technical Specifications

Parameters and characteristics for this part

SpecificationPMN40XPEAX
Current - Continuous Drain (Id) @ 25°C4.7 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)2.5 V, 8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs16 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1025 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-457, SC-74
Power Dissipation (Max)660 mW
Power Dissipation (Max)7.5 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs46 mOhm
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.15

Description

General part information

PMN40XPEA Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.