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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Package / Case | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Technology | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Grade | Power Dissipation (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 175 °C | -55 °C | 12 V | 4.7 A | P-Channel | SC-74 SOT-457 | 6-TSOP | 1025 pF | MOSFET (Metal Oxide) | 46 mOhm | 2.5 V 8 V | Surface Mount | 16 nC | Automotive | 660 mW | 7.5 W | 20 V | 1.3 V | AEC-Q101 |