2N4858UB
Active40V 360MW ROUND-END JFET UB ROHS COMPLIANT: YES
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2N4858UB
Active40V 360MW ROUND-END JFET UB ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N4858UB |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 8 mA |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 18 pF |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 360 mW |
| Resistance - RDS(On) | 60 Ohms |
| Supplier Device Package | UB |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Voltage - Cutoff (VGS off) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 85.65 | |
| Microchip Direct | N/A | 1 | $ 92.23 | |
| Newark | Each | 100 | $ 85.64 | |
| 500 | $ 82.35 | |||
Description
General part information
2N4858UB-JFET-NChannel Series
This specification covers the performance requirements for N-channel, depletion mode, silicon 2N4856 through 2N4861 J-FET (Junction Field Effect transistor). Four levels of product assurance are provided for each device (JAN, JANTX, JANTXV, and JANS) as specified in MIL-PRF-19500/385. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-18 (no suffix) and surface mount (UB suffix) for all encapsulated device types.
Documents
Technical documentation and resources