Discrete Semiconductor Products

FDMS5361L-F085

Obsolete

ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET 60V, 35A, 11.7MΩ

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Discrete Semiconductor Products

FDMS5361L-F085

Obsolete

ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET 60V, 35A, 11.7MΩ

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DocumentsDatasheet Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMS5361L-F085

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1980 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	75 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	Power56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS5361L_F085 Series

N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Power Dissipation (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Grade	Power Dissipation (Max)	Qualification
ON Semiconductor FDMS5352	6940 pF	8-PowerTDFN	MOSFET (Metal Oxide)	2.5 W	104 W	4.5 V 10 V	Surface Mount	60 V	3 V	N-Channel	13.6 A 49 A	20 V	8-PQFN (5x6)	-55 °C	150 °C	131 nC
ON Semiconductor FDMS5361L-F085	1980 pF	8-PowerVDFN	MOSFET (Metal Oxide)			4.5 V 10 V	Surface Mount	60 V	3 V	N-Channel	35 A	20 V	Power56	-55 °C	175 ░C	44 nC	15 mOhm	Automotive	75 W	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMS5361L_F085 Series

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

FDMS5361L-F085

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FDMS5361L-F085

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Technical Specifications

FDMS5361L_F085 Series

Pricing

Description

FDMS5361L_F085 Series

Documents

Datasheet

Datasheet

Package Drawing-483BJ-PQFN8 5x6, 1.27P

FDMS5361L_F085 Series