Specification	PSMP061-60YEX

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1060 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	66 W
Rds On (Max) @ Id, Vgs	61 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

PSMP061-60YE Series

60 V, P-channel Trench MOSFET

Part	Vgs(th) (Max) @ Id	Technology	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs
Nexperia USA Inc. PSMP061-60YEX	3 V	MOSFET (Metal Oxide)	SC-100 SOT-669	175 °C	-55 °C	20 V	25 A	30 nC	1060 pF	66 W	60 V	4.5 V 10 V	P-Channel	LFPAK56 Power-SO8	Surface Mount	61 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	904	$ 1.64

General part information

P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical documentation and resources