
Catalog
60 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

60 V, P-channel Trench MOSFET
60 V, P-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Technology | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 3 V | MOSFET (Metal Oxide) | SC-100 SOT-669 | 175 °C | -55 °C | 20 V | 25 A | 30 nC | 1060 pF | 66 W | 60 V | 4.5 V 10 V | P-Channel | LFPAK56 Power-SO8 | Surface Mount | 61 mOhm |