Discrete Semiconductor Products

G06NP06S2

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MOSFET N/P-CH 60V 6A 8SOP

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Discrete Semiconductor Products

Active

MOSFET N/P-CH 60V 6A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G06NP06S2

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	25 nC, 22 nC
Input Capacitance (Ciss) (Max) @ Vds	2610 pF, 1350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max	2 W, 2.5 W
Rds On (Max) @ Id, Vgs	35 mOhm, 45 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.5 V, 2.5 V

Part	Package / Case	Package / Case	Package / Case	Mounting Type	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power - Max	Configuration	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]
Goford Semiconductor G06NP06S2	0.154 in	8-SOIC	3.9 mm	Surface Mount	MOSFET (Metal Oxide)	2.5 V 3.5 V	8-SOP	1350 pF 2610 pF	35 mOhm 45 mOhm	2 W 2.5 W	N and P-Channel	22 nC 25 nC	60 V	6 A	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 6A (Tc) 2W (Tc), 2.5W (Tc) Surface Mount 8-SOP

Technical documentation and resources