Discrete Semiconductor Products

G06NP06S2

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MOSFET N/P-CH 60V 6A 8SOP

Discrete Semiconductor Products

Active

MOSFET N/P-CH 60V 6A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G06NP06S2

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Max)	22 nC, 25 nC
Input Capacitance (Ciss) (Max)	1350 pF, 2610 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOP, 8-SOIC
Package Width	3.9 mm
Power - Max (Tc)	2 W, 2.5 W
Rds On (Max)	45 mOhm, 35 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V, 3.5 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Configuration	Power - Max (Tc)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Package Name	Vgs(th) (Max)	Technology	Mounting Type	Package Length	Package Width
Goford Semiconductor G06NP06S2	-55 °C	150 °C	6 A	60 V	22 nC 25 nC	N P-Channel	2 W 2.5 W	35 mOhm 45 mOhm	1350 pF 2610 pF	8-SOIC 8-SOP	2.5 V 3.5 V	MOSFET (Metal Oxide)	Surface Mount	0.154 in	3.9 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Mosfet Array 60V 6A (Tc) 2W (Tc), 2.5W (Tc) Surface Mount 8-SOP

Technical documentation and resources