Integrated Circuits (ICs)

IR2301PBF

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INFINEON

IC GATE DRVR HI/LOW SIDE 8DIP

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Integrated Circuits (ICs)

IR2301PBF

Unknown

INFINEON

IC GATE DRVR HI/LOW SIDE 8DIP

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2301PBF

Channel Type	Independent
Driven Configuration	High-Side or Low-Side
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.9 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	50 ns
Rise / Fall Time (Typ) [custom]	130 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	5 V

IR2301 Series

Part	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH	Input Type	Package / Case	Package / Case	Package / Case	Channel Type	Number of Drivers	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
INFINEON IR2301SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-SOIC	Surface Mount	20 V	5 V	0.8 V 2.9 V	Non-Inverting	0.154 in	8-SOIC	3.9 mm	Independent	2	High-Side or Low-Side	600 V	-40 °C	150 °C
INFINEON IR2301STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-SOIC	Surface Mount	20 V	5 V	0.8 V 2.9 V	Non-Inverting	0.154 in	8-SOIC	3.9 mm	Independent	2	High-Side or Low-Side	600 V	-40 °C	150 °C
INFINEON IR2301PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-PDIP	Through Hole	20 V	5 V	0.8 V 2.9 V	Non-Inverting		8-DIP (0.300" 7.62mm)		Independent	2	High-Side or Low-Side	600 V	-40 °C	150 °C
INFINEON 98-0343	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-SOIC	Surface Mount	20 V	5 V	0.8 V 2.9 V	Non-Inverting	0.154 in	8-SOIC	3.9 mm	Independent	2	Half-Bridge	600 V	-40 °C	150 °C
INFINEON IR2301STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-SOIC	Surface Mount	20 V	5 V	0.8 V 2.9 V	Non-Inverting	0.154 in	8-SOIC	3.9 mm	Independent	2	High-Side or Low-Side	600 V	-40 °C	150 °C
INFINEON IR2301	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-PDIP	Through Hole	20 V	5 V	0.8 V 2.9 V	Non-Inverting		8-DIP (0.300" 7.62mm)		Independent	2	High-Side or Low-Side	600 V	-40 °C	150 °C
INFINEON IR2301PBF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	116	$ 2.59
		116	$ 2.59
	N/A	0	$ 6.09
		0	$ 6.09
		8357	$ 6.09
		10600	$ 2.94
		10600	$ 2.94
	Tube	1	$ 6.09
		1	$ 6.09

Description

General part information

IR2301 Series

High-Side or Low-Side Gate Driver IC Non-Inverting 8-PDIP

Documents

Technical documentation and resources

No documents available