IR2301 Series

Manufacturer: INFINEON

Catalog

EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH MOSFETS.

Part	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH	Input Type	Package / Case	Package / Case	Package / Case	Channel Type	Number of Drivers	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
INFINEON IR2301SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-SOIC	Surface Mount	20 V	5 V	0.8 V 2.9 V	Non-Inverting	0.154 in	8-SOIC	3.9 mm	Independent	2	High-Side or Low-Side	600 V	-40 °C	150 °C
INFINEON IR2301STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-SOIC	Surface Mount	20 V	5 V	0.8 V 2.9 V	Non-Inverting	0.154 in	8-SOIC	3.9 mm	Independent	2	High-Side or Low-Side	600 V	-40 °C	150 °C
INFINEON IR2301PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-PDIP	Through Hole	20 V	5 V	0.8 V 2.9 V	Non-Inverting		8-DIP (0.300" 7.62mm)		Independent	2	High-Side or Low-Side	600 V	-40 °C	150 °C
INFINEON 98-0343	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-SOIC	Surface Mount	20 V	5 V	0.8 V 2.9 V	Non-Inverting	0.154 in	8-SOIC	3.9 mm	Independent	2	Half-Bridge	600 V	-40 °C	150 °C
INFINEON IR2301STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-SOIC	Surface Mount	20 V	5 V	0.8 V 2.9 V	Non-Inverting	0.154 in	8-SOIC	3.9 mm	Independent	2	High-Side or Low-Side	600 V	-40 °C	150 °C
INFINEON IR2301	IGBT MOSFET (N-Channel) N-Channel MOSFET	50 ns	130 ns	8-PDIP	Through Hole	20 V	5 V	0.8 V 2.9 V	Non-Inverting		8-DIP (0.300" 7.62mm)		Independent	2	High-Side or Low-Side	600 V	-40 °C	150 °C
INFINEON IR2301PBF