Discrete Semiconductor Products

SQJ858AEP-T1_BE3

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MOSFET N-CH 40V 58A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 58A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ858AEP-T1_BE3

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	2450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	48 W
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Grade	Qualification
Vishay General Semiconductor - Diodes Division SQJ858AEP-T1_BE3	Surface Mount	2450 pF	6.3 mOhm	PowerPAK® SO-8	48 W	-55 °C	175 ░C	PowerPAK® SO-8	2.5 V	58 A	MOSFET (Metal Oxide)	40 V	20 V	N-Channel	55 nC
Vishay General Semiconductor - Diodes Division SQJ858AEP-T1_GE3	Surface Mount	2450 pF	6.3 mOhm	PowerPAK® SO-8	48 W	-55 °C	175 ░C	PowerPAK® SO-8	2.5 V	58 A	MOSFET (Metal Oxide)	40 V	20 V	N-Channel	55 nC	4.5 V 10 V	Automotive	AEC-Q101

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General part information

N-Channel 40 V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources