SQJ858 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 40V 58A PPAK SO-8
| Part | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Package / Case | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Technology | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | 2450 pF | 6.3 mOhm | PowerPAK® SO-8 | 48 W | -55 °C | 175 ░C | PowerPAK® SO-8 | 2.5 V | 58 A | MOSFET (Metal Oxide) | 40 V | 20 V | N-Channel | 55 nC | |||
Vishay General Semiconductor - Diodes Division | Surface Mount | 2450 pF | 6.3 mOhm | PowerPAK® SO-8 | 48 W | -55 °C | 175 ░C | PowerPAK® SO-8 | 2.5 V | 58 A | MOSFET (Metal Oxide) | 40 V | 20 V | N-Channel | 55 nC | 4.5 V 10 V | Automotive | AEC-Q101 |