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TO-18
Discrete Semiconductor Products

MV2N5115

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Microchip Technology

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 30V, 1-ELEMENT, P-CHANNEL, SILICON, JUNCTION FET, TO-206AA

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Documents2N5114-16
TO-18
Discrete Semiconductor Products

MV2N5115

Active
Microchip Technology

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 30V, 1-ELEMENT, P-CHANNEL, SILICON, JUNCTION FET, TO-206AA

Deep-Dive with AI

Documents2N5114-16

Technical Specifications

Parameters and characteristics for this part

SpecificationMV2N5115
Current - Drain (Idss) @ Vds (Vgs=0)15 mA, 15 V
Drain to Source Voltage (Vdss)30 V
FET TypeP-Channel
GradeMilitary
Input Capacitance (Ciss) (Max) @ Vds [Max]25 pF
Mounting TypeThrough Hole
Package / CaseTO-18-3 Metal Can, TO-206AA
Power - Max [Max]500 mW
QualificationMIL-PRF-19500
Resistance - RDS(On)100 Ohms
Supplier Device PackageTO-18
Supplier Device PackageTO-206AA
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 75.85
Microchip DirectN/A 1$ 81.68
NewarkEach 100$ 75.85
500$ 72.94

Description

General part information

MV2N5115-Transistor Series

This family of 2N5114 through 2N5116 JFET P-CH transistors are military screened to JANTXV equivalent for high-reliability applications. These transistors are available in a (TO-18) and surfacemont UB package. Microchip also offers numerous other products to meet higher and lower power voltage regulation applications.

Documents

Technical documentation and resources