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ONSEMI FDC6401N
Discrete Semiconductor Products

FDC6401N

Active
ON Semiconductor

DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, 20V, 3.0A, 70MΩ

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ONSEMI FDC6401N
Discrete Semiconductor Products

FDC6401N

Active
ON Semiconductor

DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, 20V, 3.0A, 70MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC6401N
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs4.6 nC
Input Capacitance (Ciss) (Max) @ Vds324 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power - Max [Max]700 mW
Rds On (Max) @ Id, Vgs70 mOhm
Supplier Device PackageSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.65
10$ 0.56
100$ 0.39
500$ 0.32
1000$ 0.28
Digi-Reel® 1$ 0.65
10$ 0.56
100$ 0.39
500$ 0.32
1000$ 0.28
Tape & Reel (TR) 3000$ 0.25
6000$ 0.23
9000$ 0.22
30000$ 0.21
NewarkEach (Supplied on Full Reel) 3000$ 0.27
6000$ 0.26
12000$ 0.24
18000$ 0.23
30000$ 0.23
ON SemiconductorN/A 1$ 0.23

Description

General part information

FDC6401N Series

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.