FDC6401N Series

Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mΩ

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Power - Max [Max]	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Configuration	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDC6401N	70 mOhm	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	700 mW	Surface Mount	MOSFET (Metal Oxide)	3 A	1.5 V	2 N-Channel (Dual)	20 V	324 pF	-55 °C	150 °C	4.6 nC

Catalog

Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mΩ

Key Features

• 3.0 A, 20 V

• RDS(ON)= 70 mΩ @ VGS= 4.5 V

• RDS(ON)= 95 mΩ @ VGS= 2.5 V

• Low gate charge

• High performance trench technology for extremelylow RDS(on)

• High power and current handling capability

Description

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.