STW11NK90Z
ActiveN-CHANNEL 900 V, 0.82 OHM TYP., 9.2 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN A TO-247 PACKAGE
STW11NK90Z
ActiveN-CHANNEL 900 V, 0.82 OHM TYP., 9.2 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN A TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW11NK90Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9.2 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 115 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 200 W |
| Rds On (Max) @ Id, Vgs | 980 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
STW11NK90Z Series
N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package
| Part | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) | Mounting Type | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | TO-247-3 | 10 V | N-Channel | 4.5 V | 900 V | 30 V | 200 W | Through Hole | MOSFET (Metal Oxide) | 150 °C | -55 °C | TO-247-3 | 9.2 A | 115 nC | 980 mOhm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 391 | $ 7.69 | |
Description
General part information
STW11NK90Z Series
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products
Documents
Technical documentation and resources