Specification	FDD850N10L

Current - Continuous Drain (Id) @ 25°C	15.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28.9 nC
Input Capacitance (Ciss) (Max) @ Vds	1465 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

FDD850N10L Series

N-Channel PowerTrench® MOSFET 100V, 15.7A, 75mΩ

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
ON Semiconductor FDD850N10L	20 V	75 mOhm	28.9 nC	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	10 V	5 V	1465 pF	MOSFET (Metal Oxide)	50 W	2.5 V	Surface Mount	100 V	15.7 A	TO-252AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.67
		10	$ 1.06
		100	$ 0.71
		500	$ 0.56
		1000	$ 0.51
	Digi-Reel®	1	$ 1.67
		10	$ 1.06
		100	$ 0.71
		500	$ 0.56
		1000	$ 0.51
	Tape & Reel (TR)	2500	$ 0.46
		5000	$ 0.43
		7500	$ 0.42
Newark	Each (Supplied on Full Reel)	1	$ 0.58
		3000	$ 0.56
		6000	$ 0.51
		12000	$ 0.46
		18000	$ 0.44
		30000	$ 0.43
ON Semiconductor	N/A	1	$ 0.39

Description

General part information

FDD850N10L Series

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.