FDD850N10L Series

N-Channel PowerTrench® MOSFET 100V, 15.7A, 75mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V, 15.7A, 75mΩ

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
ON Semiconductor FDD850N10L	20 V	75 mOhm	28.9 nC	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	10 V	5 V	1465 pF	MOSFET (Metal Oxide)	50 W	2.5 V	Surface Mount	100 V	15.7 A	TO-252AA

Catalog

N-Channel PowerTrench® MOSFET 100V, 15.7A, 75mΩ

Key Features

• RDS(on)= 61mΩ ( Typ.) @ VGS= 10V, ID= 12A

• RDS(on)= 64mΩ ( Typ.) @ VGS= 5V, ID= 12A

• Low Gate Charge ( Typ. 22.2nC)

• Low Crss( Typ. 42pF)

• Fast Switching

• 100% Avalanche Tested

• Improve dv/dt Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.