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STMicroelectronics-ACST830-8T TRIACs TRIAC 800V 84A 3-Pin(3+Tab) TO-220AB Tube
Discrete Semiconductor Products

STP18NM60N

Active
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 13 A, 600 V, 0.26 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsDatasheetAN3994+18
STMicroelectronics-ACST830-8T TRIACs TRIAC 800V 84A 3-Pin(3+Tab) TO-220AB Tube
Discrete Semiconductor Products

STP18NM60N

Active
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 13 A, 600 V, 0.26 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheetAN3994+18

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP18NM60N
Current - Continuous Drain (Id) @ 25°C13 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1000 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)110 W
Rds On (Max) @ Id, Vgs285 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 586$ 1.36
NewarkEach 1$ 3.08
10$ 1.85
100$ 1.77
500$ 1.56
1000$ 1.55
2500$ 1.54
5000$ 1.52

Description

General part information

STP18NM60N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.