Discrete Semiconductor Products

SI4491EDY-T1-GE3

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MOSFET P-CH 30V 17.3A 8SO

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Discrete Semiconductor Products

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MOSFET P-CH 30V 17.3A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4491EDY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	17.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	153 nC
Input Capacitance (Ciss) (Max) @ Vds	4620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	3.1 W, 6.9 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.8 V

Part	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI4491EDY-T1-GE3	3.1 W 6.9 W	MOSFET (Metal Oxide)	30 V	17.3 A	25 V	4620 pF	P-Channel	-55 °C	150 °C	Surface Mount	2.8 V	153 nC	4.5 V 10 V	8-SOIC	3.9 mm	0.154 in	8-SOIC	6.5 mOhm

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General part information

P-Channel 30 V 17.3A (Ta) 3.1W (Ta), 6.9W (Tc) Surface Mount 8-SOIC

Technical documentation and resources