SI4491 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 30V 17.3A 8SO
| Part | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3.1 W 6.9 W | MOSFET (Metal Oxide) | 30 V | 17.3 A | 25 V | 4620 pF | P-Channel | -55 °C | 150 °C | Surface Mount | 2.8 V | 153 nC | 4.5 V 10 V | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 6.5 mOhm |