Discrete Semiconductor Products

TK12A60D(STA4,Q,M)

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POWER MOSFET, N CHANNEL, 600 V, 12 A, 0.45 OHM, SC-67, THROUGH HOLE

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 600 V, 12 A, 0.45 OHM, SC-67, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	TK12A60D(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	550 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage TK12A60D(STA4,Q,M)	600 V	N-Channel	45 W	MOSFET (Metal Oxide)	Through Hole	38 nC	550 mOhm	12 A	10 V	TO-220SIS	30 V	1800 pF	150 °C	TO-220-3 Full Pack
Toshiba Semiconductor and Storage TK12A60W,S4VX	600 V	N-Channel	35 W	MOSFET (Metal Oxide)	Through Hole			11.5 A	10 V	TO-220SIS	30 V	890 pF	150 °C	TO-220-3 Full Pack	300 mOhm	3.7 V	25 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 12A (Ta) 45W (Tc) Through Hole TO-220SIS

Technical documentation and resources